Modeling and Characterization of RF and Microwave Power FETs: Characterization a

Publisher Description

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Notes

Covering RF power FETs, this is the first book to address the modeling requirements specific to high-power RF transistors. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. A technology-independent approach is described, and current market-leading high-power RF technology, LDMOS, as well as III-V power devices are used to illustrate key concepts. Written by semiconductor industry professionals with many years' device modeling experience, this is a must-have resource for professionals and new graduates in the power amplifier design and modeling community.

Author Biography

Peter H. Aaen is the Modeling Group Manager in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. Jaime A. Pia is the Design Organization Manager in the RF Division at Freescale in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. John Wood is Senior Technical Contributor responsible for RF CAD and Modeling in the RF Division at Freescale Semiconductor, Inc., Tempe, Arizona. He is a Fellow of the IEEE.

Table of Contents

1. RF and microwave power transistors; 2. An introduction to the compact modeling of high power FETs; 3. Electrical measurement techniques; 4. Passive components: simulation and modeling; 5. Thermal characterization and modeling; 6. Modeling the active transistor; 7. Function approximation for compact modeling; 8. Model implementation in CAD tools; 9. Model validation; About the authors; Index.

Review

'...a well-written and useful text. ...a coherent review of the advanced state of power FET modelling and characterisation.' IEEE microwave magazine

Promotional

This book was the first to be devoted to the compact modeling of RF power FETs.

Review Quote

"Truly useful...a well-written and...coherent review of the advanced state of power FET modeling and characterization" IEEE Microwave Magazine, June 2008

Promotional "Headline"

This book was the first to be devoted to the compact modeling of RF power FETs.

Description for Bookstore

This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.

Description for Library

This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.

Details